Fcc Si bandstructure: Difference between revisions
Line 66: | Line 66: | ||
[http://www.vasp.at/vasp-workshop/examples/fccSiband.tgz fccSiband.tgz] | [http://www.vasp.at/vasp-workshop/examples/fccSiband.tgz fccSiband.tgz] | ||
---- | ---- | ||
[[ | [[VASP tutorials|To the list of examples]] or to the [[The_VASP_Manual|main page]] | ||
[[Category:Examples]] | [[Category:Examples]] |
Revision as of 11:06, 4 July 2017
Overview > fcc Si > fcc Si DOS > fcc Si bandstructure > cd Si > cd Si volume relaxation > cd Si relaxation > beta-tin Si > fcc Ni > graphite TS binding energy > graphite MBD binding energy > graphite interlayer distance > List of tutorials
Task
Computation of the bandstructure in fcc Si along L-Γ-X-U and K-Γ.
Input
POSCAR
fcc Si: 3.9 0.5 0.5 0.0 0.0 0.5 0.5 0.5 0.0 0.5 1 cartesian 0 0 0
INCAR
System = fcc Si ICHARG = 11 #charge read file ENCUT = 240 ISMEAR = 0; SIGMA = 0.1; LORBIT = 11
KPOINTS
k-points for bandstructure L-G-X-U K-G 10 line reciprocal 0.50000 0.50000 0.50000 1 0.00000 0.00000 0.00000 1 0.00000 0.00000 0.00000 1 0.00000 0.50000 0.50000 1 0.00000 0.50000 0.50000 1 0.25000 0.62500 0.62500 1 0.37500 0.7500 0.37500 1 0.00000 0.00000 0.00000 1
- k points along the line .
- 10 points per line.
- Keyword line to generate bandstructure.
- In reciprocal coordinates.
- All points with weight 1.
- Example bandstructure should look like this:
CHGCAR
This calculation needs a converged charge density as input (ICHARG=11). You may use the CHGCAR file of the fcc Si DOS example.
CALCULATION
- To copy the self-consistent charge density of example fccSidos to your current working
directory, type: $ cp ../fccSidos/CHGCAR . You must do this otherwise VASP can not read the CHGCAR and will terminate.
- To plot the bandstructure use p4vasp:
Mind: For this calculations you need the CHGCAR file of the fcc Si DOS example.
Download
To the list of examples or to the main page