Fcc Si bandstructure: Difference between revisions
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=== {{TAG|CHGCAR}} === | === {{TAG|CHGCAR}} === | ||
This calculation needs a converged charge density as input ({{TAG|ICHARG}}=11). | This calculation needs a converged charge density as input ({{TAG|ICHARG}}=11). | ||
You may use the {{FILE|CHGCAR}} file of the [[Fcc Si DOS|fcc Si DOS | You may use the {{FILE|CHGCAR}} file of the [[Fcc Si DOS|fcc Si DOS]] example. | ||
== CALCULATION == | == CALCULATION == |
Revision as of 06:50, 3 May 2017
Overview > fcc Si > fcc Si DOS > fcc Si bandstructure > cd Si > cd Si volume relaxation > cd Si relaxation > beta-tin Si > fcc Ni > graphite TS binding energy > graphite MBD binding energy > graphite interlayer distance > List of tutorials
Task
Compute the bandstructure in fcc Si along L-Γ-X-U and K-&Gamma.
Input
POSCAR
fcc Si: 3.9 0.5 0.5 0.0 0.0 0.5 0.5 0.5 0.0 0.5 1 cartesian 0 0 0
INCAR
System = fcc Si ICHARG = 11 #charge read file ENCUT = 240 ISMEAR = 0; SIGMA = 0.1; LORBIT = 11
KPOINTS
k-points for bandstructure L-G-X-U K-G 10 line reciprocal 0.50000 0.50000 0.50000 1 0.00000 0.00000 0.00000 1 0.00000 0.00000 0.00000 1 0.00000 0.50000 0.50000 1 0.00000 0.50000 0.50000 1 0.25000 0.62500 0.62500 1 0.37500 0.7500 0.37500 1 0.00000 0.00000 0.00000 1
CHGCAR
This calculation needs a converged charge density as input (ICHARG=11). You may use the CHGCAR file of the fcc Si DOS example.
CALCULATION
Mind: For this calculations you need the CHGCAR file of the fcc Si DOS example.
Download
To the list of examples or to the main page