NOMEGA: Difference between revisions
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== Example Calculations using this Tag == | == Example Calculations using this Tag == | ||
{{TAG|bandgap of Si in GW}}, {{TAG|bandstructure of Si in GW (VASP2WANNIER90) }}, {{TAG|Dielectric properties of Si using BSE}}, {{TAG|Equilibrium volume of Si in the RPA}}, {{TAG|Model BSE calculation on Si}} | {{TAG|bandgap of Si in GW}}, {{TAG|bandstructure of Si in GW (VASP2WANNIER90) }}, {{TAG|Dielectric properties of Si using BSE}}, {{TAG|Equilibrium volume of Si in the RPA}}, {{TAG|Model BSE calculation on Si}} | ||
{{sc|NOMEGA|Examples|Examples that use this tag}} | |||
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[[The_VASP_Manual|Contents]] | [[The_VASP_Manual|Contents]] | ||
[[Category:INCAR]] [[Category:GW]] | [[Category:INCAR]] [[Category:GW]] |
Revision as of 10:48, 20 March 2017
NOMEGA = [integer]
Default: NOMEGA | = 50 | for GW calculations |
= 12 | for ACFDT calculations |
Description: NOMEGA specifies the number of frequency grid points.
Typically NOMEGA should be chosen around 50-100 (for the parallel version, NOMEGA should be dividable by the number of compute nodes to obtain maximum efficiency). For quick and memory conserving calculations, it is sufficient to set NOMEGA to values around NOMEGA = 20-30, but then you must expect errors of the order of 20-50 meV for the gap, and 100-200 meV for the bottom of the conduction band. We furthermore recommend to increase NOMEGA not beyond 100 for a -point sampling of 4×4×4 points/atom: the joint DOS and the self-energy tend to posses spurious fine structure related to the finite -point grid. This fine structure is smoothed, when smaller values for NOMEGA are used, or if more -points are used. For 6×6×6 -points/atom NOMEGA can be usually increased to 200-300 without noticing problems associated with this kind of noise.
Note that the spectral method (see LSPECTRAL) scales very favourable with respect to the number of frequency points, hence NOMEGA=30 is usually only slightly faster than NOMEGA=100.
Related Tags and Sections
Example Calculations using this Tag
bandgap of Si in GW, bandstructure of Si in GW (VASP2WANNIER90) , Dielectric properties of Si using BSE, Equilibrium volume of Si in the RPA, Model BSE calculation on Si